Datasheet Summary
2N2405
For Specifications, See 2N1893 Data.
2N2410 (SILICON)
CASE 31
(TO- 5)
NPN.silicon annular transistor designed for highspeed, medium-power saturated switchingapplications.
Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Emitter Voltaga
RBE = 10 ohms
VCEO VCER
Collector-Base Voltage
VeB
Emitter-Base voitage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ Te = 25°C
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
Tstg
Value
30 40
60 5.0 800 800 4.57 2.5 14.3 200
-65 to...
