2N2410 - NPN.silicon annular transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N2410
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	112.60 KB
Description	NPN.silicon annular transistor
Datasheet	2N2410 Datasheet

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2N2405 For Specifications, See 2N1893 Data. 2N2410 (SILICON) CASE 31 (TO·5) NPN.silicon annular transistor designed for highspeed, medium-power saturated switchingapplications. Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltaga RBE = 10 ohms VCEO VCER Collector-Base Voltage VeB Emitter-Base voitage VEB Collector Current IC Total Device Dissipation @ TA = 25°C PD Derate above 25°C Total Device Dissipation @ Te = 25°C PD Derate above 25°C Operating Junction Temperature Range TJ Storage Temperature Range Tstg Value 30 40 60 5.0 800 800 4.57 2.5 14.3 200 -65 to +200 Unit Vdc Vdc Vdc Vdc mAdc mW mW/oC Watts mW/oe °c °c 2-296 2N2410 (continued) ELECTRICAL CHARACTERISTICS (T. = 25'e ,,'''' ,th,,..