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2N2476 (SILICON) 2N2477
NPN silicon annular transistors designed for highspeed, low-power saturated switching applications.
CASE 31
(TO-5)
Collector connected td case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCB
Emitter-Base Voltage
VEB
Total Device Dissipation @ TA = 25° C
PD
Derate above 25° C
Total Device Dissipation @ T C = 25° C
PD
Derate above 25° C
Operating & Storage Junction Temperature Range
T j' Tstg
Value
20
60
5.0
0.6 3.4 2.0 11. 4 -65 to +200
Unit
Vdc
Vdc
Vdc
Watt mW/oC Watts mW/oC
°c
FIGURE 1- TURN-ON TIME TEST CIRCUIT
Vin Z=500
10000 500
400 V of< out
o -..I2ns : (max)
PW >150 ns D.C. < 210
I
6.
2N2476 Datasheet
