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2N2477 - NPN Transistor

Download the 2N2477 datasheet PDF. This datasheet also covers the 2N2476 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2476-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2476 (SILICON) 2N2477 NPN silicon annular transistors designed for highspeed, low-power saturated switching applications. CASE 31 (TO-5) Collector connected td case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Total Device Dissipation @ TA = 25° C PD Derate above 25° C Total Device Dissipation @ T C = 25° C PD Derate above 25° C Operating & Storage Junction Temperature Range T j' Tstg Value 20 60 5.0 0.6 3.4 2.0 11. 4 -65 to +200 Unit Vdc Vdc Vdc Watt mW/oC Watts mW/oC °c FIGURE 1- TURN-ON TIME TEST CIRCUIT Vin Z=500 10000 500 400 V of< out o -..I2ns : (max) PW >150 ns D.C. < 210 I 6.