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2N2609 - GENERAL PURPOSE JFET

Download the 2N2609 datasheet PDF. This datasheet also covers the 2N2608 variant, as both devices belong to the same general purpose jfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2608-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N2609 P-CHANNEL POWER MOSFET NES
2N2609 P-CHANNEL J-FET Microsemi Corporation
2N2609 P-Channel JFET InterFET
2N2604 (2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR Microsemi Corporation
2N2604 PNP SIlicon Transistor Central

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N2605 AMPLIFIER TRANSISTOR
2N2608 GENERAL PURPOSE JFET
2N2635 PNP Transistor
2N2639 DUAL AMPLIFIER TRANSISTORS NPN SILICON
2N2640 DUAL AMPLIFIER TRANSISTORS NPN SILICON

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2608 2N2609 CASE 22-03, STYLE 12 TO-18 (TO-206AA) JFET GENERAL PURPOSE —P-CHANNEL DEPLETION Refer to 2N5460 for graphs. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Storage Temperature Range Symbol vDs vdg vqs 'G PD T stg Value 30 30 30 50 300 2.0 - 60 to + 200°C Unit Vdc Vdc Vdc mA mW mW/°C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Gate-Source Breakdown Voltage dG = 1.0 mA) Gate Reverse Current (Vgs = 5.0 V) Gate Source Cutoff Voltage (Vqs = -5.0 V, Dl = -1.0/iA) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (Vqs = " 5.