Download 2N2710 Datasheet PDF
Motorola Semiconductor
2N2710
2N2710 is NPN silicon transistor manufactured by Motorola Semiconductor.
2N2710 (SILICON) NPN silicon transistor primarily designed for high-speed, low-power saturated switching applications for industrial service. CASE 22 (TO- 18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation @ TA = 25° C Derate above 25° C Total Device Dis Sipation @ T C = 25° C Operating Junction Temperature Range Storage Temperature Range Symbol VCEO VCES VCB VEB IC PD PD TJ T stg Value 20 30 40 5.0 500 0.36 2.1 1.2 +200 -65 to +200 Unit Vdc Vdc Vdc Vdc m Adc W m W/o C W °c °c FIGURE 1 - STORAGE TIME TEST CIRCUIT +6.0Vl J -4.0 V I" I, ~ 0.5 ns Zi' ~ 50 ohms OSCILLOSCOPE INPUT~ 10Mn ~ 1.5p F tr = t, ~ 0.4ns 2-330 2N2710 (continued) ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Characteristic Symbol...