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2N2710 (SILICON)
NPN silicon transistor primarily designed for high-speed, low-power saturated switching applications for industrial service.
CASE 22
(TO·18) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation @ TA = 25° C
Derate above 25° C
Total Device DisSipation @ T C = 25° C
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCEO VCES VCB VEB
IC PD
PD TJ T stg
Value
20 30 40 5.0 500 0.36 2.1 1.2 +200 -65 to +200
Unit
Vdc Vdc Vdc Vdc mAdc
W mW/oC
W °c °c
FIGURE 1 - STORAGE TIME TEST CIRCUIT
JOV
+6.0VlJ
-4.0 V
I" I, ~ 0.5 ns Zi' ~ 50 ohms
980
500
OSCILLOSCOPE
INPUT~ 10Mn
~ 1.5pF
tr = t, ~ 0.
2N2710 Datasheet
