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2N2845 thru 2N2848 (SILlC()N)
CASE 22
(TO-18)
2N2845 2N2847
NPN silicon annular transistors designed for highspeed, medium-power saturated switchingapplications.
CASE 31
(TO-S) 2N2846 2N2848
MAXIMUM RATINGS
Rating
Symbol 2N2845 2N2846 2N2847 2N2848 Unit
Collector-Eniitter Voltage*
VCEO*
30
30
20
20
Vdc
Collector-Base Voltage
VCB
60
60
60
60
Vdc
Eniitter-Base Voltage
VEB
5.0
5.0
5.0
5.0
Vdc
Total Device Dissipation@ TA = 25°C
Po
Derate above 25°C
360 800
2.1
4.6
360 800
mW
2.1
4.6
mW/oC
Total Device Dissipation@TC = 25°C
Po
Derate above 25°C
1.2
3.0
6.9 17.2
1.2
3.0
Watts
6.9 17.
2N2845 Datasheet
