2N2895 Overview
Tstg 1.8 10.3 -65 to +200 Watts mW/°C °C (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage!
2N2895 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N2895 |
|---|---|
| Datasheet | 2N2895-Motorola.pdf |
| File Size | 48.86 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | GENERAL PURPOSE TRANSISTOR |
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Tstg 1.8 10.3 -65 to +200 Watts mW/°C °C (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage!
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N2895 | Bipolar NPN Device | Seme LAB |
| Solid State | 2N2895 | NPN Silicon Transistor | Solid State |
| 2N2895 | SILICON NPN TRANSISTORS | Central Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N2800 | PNP Transistor |
| 2N2801 | PNP Transistor |
| 2N2832 | PNP Transistor |
| 2N2833 | PNP Transistor |
| 2N2834 | PNP Transistor |
| 2N2837 | PNP Transistor |
| 2N2838 | PNP Transistor |
| 2N2845 | NPN Transistor |
| 2N2846 | NPN Transistor |
| 2N2847 | NPN Transistor |