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2N2916 - DUAL AMPLIFIER TRANSISTOR

Download the 2N2916 datasheet PDF. This datasheet also covers the 2N2913 variant, as both devices belong to the same dual amplifier transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N2913-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N2912 high-frequency power transistor
2N2913 DUAL AMPLIFIER TRANSISTOR
2N2914 DUAL AMPLIFIER TRANSISTOR
2N2915 DUAL AMPLIFIER TRANSISTOR
2N2917 DUAL AMPLIFIER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2913 thru MAXIMUM RATINGS 2N2920 JAN, JTX, JTXV, JANS AVAILABLE CASE 654-07, STYLE 1 DUAL AMPLIFIER TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Symbol Collector-Emitter Breakdown Voltage dC = 10 mAdc, Iq = 0) Collector-Base Breakdown Voltage dC = 10 /nAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 10 AtAdc, cl = 0) Collector Cutoff Current (VCE = 5.