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2N2947(SILICON) 2N2948
CASE 1
(TO-3)
Collector connected to case
NPN silicon annular transistors for power amplifier applications to 100 MHz.
MAXIMUM RATINGS*
Rating
Collector- Base Voltage Collector-Emitter Voltage Emitter - Base Voltage Collector- Current (continuous) Base-Current (continuous) Power Input (Nominal) Power Output (Nominal) Total Device Dissipation
@ 25 °C Case Temperature
Derating Factor above 25 0 C Junction Temperature Storage Temperature Range
Symbol
VCB VCES VEB IC IB P.
In
P out PD
2N2947 2N2948
60
40
60
40
3.0
2.0
1.5
500
5.0
20.0
25.0
Unit
Vdc Vdc Vdc Adc mAdc Watts Watts Watts
167
mWjOC
TJ
175
°c
Tst!!:
-65to+175
°c
*The maximum ratings as given for de conditions can be exceeded on a pulse basis. See electrical characteristics.
2N2947 Datasheet
