Motorola 2N2949
NPN Transistor
| Part No. | 2N2949 |
|---|---|
| Datasheet | 2N2949 Download |
| Manufacturer |  Motorola |
| Description | NPN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
- ~~ting Symbol Value Unit Collector- Base 'V()ltage Collector-Emitter Voltage Emitter - Base Voltage Collector Current (Continuous) Base Current (Continuous) RF Input Power (Nom) RF Output Power (Nom) Total Device Dissipation (2S0C Case temperature) (Derating Factor above 25°C) Total Device Dissipation at 25° Ambient (Derating Factor above 2S0C) VCB VCES VEB IC IB Pin Pout Po Po 60 60 3.0 0.7 100 1.0 S.O 6.0 40 2N2949 0.5 3.33 2N2950 0.7 4.67 Vdc Vdc Vdc Adc mAdc Watt Watts Watts mW/oC Watt mW/●C Junction Temperature TJ 175●C Storage Temperature Range Tstg -65 to + 175
●C * The maxImum ratings as gIven for de condItions can be. exceeded on a pulse baSIS. See
ELECTRICAL CHARACTERISTICS
. POWER OUTPUT versus COLLECTOR VOLTAGE POWER OUTPUT versus POWER INPUT V o o V / V // P" = 0.2SW 1=50 MHz Tc = 25'C /' 5 10 15 20 25 VeE, CotLECTOR-EMITTERVOLTAGE (VOLTS) OoL-----0.1~----0.~2 ----0~.3----~0.4----0~.5 p.., POWER INPUT (WATTS) 2-380 2N2949, 2N2950 (Continued)ELECTRICAL CHARACTERISTICS
ITA = 250 C unless otherwise noted) Characteristic Symbol Test Conditions Min Collector-Emitter Sustain Voltage 111 VcEs(swii IC=O.