Motorola 2N3021
PNP silicon power transistors
| Part No. | 2N3021 |
|---|---|
| Datasheet | 2N3021 Download |
| Manufacturer |  Motorola |
| Description | PNP silicon power transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector-Base Voltage Collector-Emitter Voltage Symbol 2N3021 2N3024 VCB 30 VCEO 30 2N3022 2N3025 45 45 Emitter-Base Voltage VEB 4.0 Collector Current Base Current Ie 3.0 IB 0.5 Power Dissipation PD Junction Operating Temperature Range TJ 25 -65 to +175 2N3023 2N3026 60 Unit Volts 60 Volts Volts Amp Amp watts OC 2-405 2N3021 thru 2N3026 (continued)ELECTRICAL CHARACTERISTICS
(At 25°C unless otherwise specified) Characteristics Emitter-Base CutoU Current (VSE = 4 Vdc) Collector-Emitter Cutoff Current (VCE = 25 Vdc, VSE = 2 Vdc) (VCE = 40 Vdc, VSE = 2 Vdc) (VCE = 54 Vdc, VSE = 2 Vdc) (VCE = IS Vdc, VSE = 2 Vdc, TC = 150°C) (VCE = 25 Vdc, VSE = 2 Vdc, TC =150°C) (VCE = 35 Vde, VSE = 2 Vde, TC = 150°C) Collector-Emitter Breakdown Voltage(IC = 100 mAde, IS = 0) (Ie = 50 mAde, IS = 0) (IC = 20 mAde, IS = 0) DC Current Gain (IC = 1.0 Adc, VCE =2 Vde) 2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026 2N3021, 2N3024 2N3022, 2N3025 2N3023, 2N3026 2N3021, 2N3024 2N3022, 2N3025...
