2N307 - PNP germanium power transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N307
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	62.07 KB
Description	PNP germanium power transistors
Datasheet	2N307 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

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2N3072	PNP SILICON TRANSISTORS
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2N307A	PNP germanium power transistors
2N3009	NPN Transistor
2N3010	NPN silicon low-power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N242 (GERMANIUM) 2N307, A CASE1~ PNP germanium power transistors for general pur- (TO_3lI1~ pose power amplifier and switching applications_ MAXIMUM RATINGS Rating Collector - Base Voltage Collector-Emitter Voltage (RsE = 301'l) Collector- Emitter Voltage Emitter - Base Voltage Collector Current Junction Temperature Range Collector Dissipation (at TC = 250 C) Symbol VCB VCER VCEO VEB IC TJ PD 2N242 45 45 - - 5.0 -65 to ... 110 106 2N307. 307A 35 - 35 10 5.0 -65 to ...