2N307 Datasheet | Motorola Semiconductor

2N242 (GERMANIUM) 2N307, A CASE1~ PNP germanium power transistors for general pur- (TO_3l I1~ pose power amplifier and switching applications_ MAXIMUM RATINGS Rating Collector - Base Voltage Collector-Emitter Voltage (Rs E = 301'l) Collector- Emitter Voltage Emitter - Base Voltage Collector Current Junction Temperature Range Collector Dissipation (at TC = 250 C) Symbol VCER VCEO VEB IC TJ PD 2N242 45 45 - - 5.0 -65 to ... 110 2N307. 307A - 35 10 5.0 -65 to ...110 106 Unit Volts Volts Volts Volts Amp °c Watts ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Collector- Base Cutoff Current (VCB = 2 Vdc) (VCB = 25 Vdc) (VCB = 1 Vdc, IE = 0, TC= 850 C) Emitter- Base Cutoff Current (VEB = 10 Vdc) Collector-Emitter Cutoff Current (VCE = 45Vdc, RBE =301'l) (VCE = 25 Vdc, RBE = 30 I'l) (VCE = 35Vdc, RBE =301'l) Base - Emitter Voltage (VCE = 1. 5 Vdc, IC = 1. OAdc) Collector - Emitter Saturation Voltage (IC = 2. 0 Adc, IB = 200 m Adc) (IC = 0.2 Adc, IB = 20 m Adc) (l C = 1. 0 Adc, IB = 100 m Adc) DC Current Gain (VCE = 12 Vdc, IC = 500 m Adc) (VCE = 1 Vdc,.IC = 200 m Adc) mon Emitter Cutoff Frequency (VCE = 12 V. IC = 0.5 A) (VCE = 6 V. IC = 1 A) Power Gain (IC = 0.5 A. VCE = -14 V, RL = 301'l. Rg=101'l) 2N307 2N307 2N307A 2N242 2N242 2N242 2N307...