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2N3073 - PNP SILICON TRANSISTORS

Download the 2N3073 datasheet PDF. This datasheet also covers the 2N3072 variant, as both devices belong to the same pnp silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3072-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N307 PNP germanium power transistors
2N3072 PNP SILICON TRANSISTORS
2N307A PNP germanium power transistors
2N3009 NPN Transistor
2N3010 NPN silicon low-power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3072 (SILICON) 2N3073 PNP SILICON ANNULAR TRANSISTORS . designed for medium·speed, industrial switching applications. • Choice of Package and Power Ratings • Low Coliector·Emitter Saturation Voltage - VCE(sat) = 0.25 Vdc (Max) @ IC = 50 mAdc • High Small,Signal Current Gain - hfe = 180 (Max) @ IC = 10 mAdc *MAXIMUM RATINGS Rating Collector~Emitter Voltage Coliector·Sa.. Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA=250e Derate above 25°C Total Device Dissipation @Te=250e Derate above 2SoC Operating and Storage Junction Temperature Range "'Indicates JEQEC Registered Data. Symbol VeEO Ves VES Ie Po Po TJ.Tstg 2N3072 2N3073 60 60 4.0 500 800 4.56 360 2.06 3.0 1.2 17.1 6.