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2N2958 (SILICON) 2N2959 2N3115 2N3116
NPN silicon annular Star transistors for high- speed "switching and amplifier applications.
CASE 22
(TO·18)
2N2958 2N2959
2N3115 2N3116
Collector connected to case
MAXIMUM RATINGS
Rating Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Current
Total Device Dissipation 25°C Case Temperature
Derate above 25°C
Total Device Dissipation 25°C Ambient Temperature
Derate above 25°C
Junction Temperature Range
Storage Temperature Range
Symbol
~~~;~~
(TO·S)
VCB
60
2N311S 2N3ll6 (TO·1S)
60
Unit Vdc
VCEO 20
20 Vdc
VEB
5.0
5.0
Vdc
IC
600 600 mAdc
PD
3.0 1.8 watts
20
12 mW/oC
PD
0.6
0.4 watts
4.00 2.
2N3115 Datasheet
