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2N3116 - NPN Transistor

Download the 2N3116 datasheet PDF. This datasheet also covers the 2N3115 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3115-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3114 Amplifier Transistor
2N3115 NPN Transistor
2N3120 PNP SILICON TRANSISTOR
2N3121 PNP SILICON TRANSISTOR
2N3127 PNP germanium mesa transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2958 (SILICON) 2N2959 2N3115 2N3116 NPN silicon annular Star transistors for high- speed "switching and amplifier applications. CASE 22 (TO·18) 2N2958 2N2959 2N3115 2N3116 Collector connected to case MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current Total Device Dissipation 25°C Case Temperature Derate above 25°C Total Device Dissipation 25°C Ambient Temperature Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol ~~~;~~ (TO·S) VCB 60 2N311S 2N3ll6 (TO·1S) 60 Unit Vdc VCEO 20 20 Vdc VEB 5.0 5.0 Vdc IC 600 600 mAdc PD 3.0 1.8 watts 20 12 mW/oC PD 0.6 0.4 watts 4.00 2.