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2N321 - PNP germanium power transistors

Download the 2N321 datasheet PDF. This datasheet also covers the 2N319 variant, as both devices belong to the same pnp germanium power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N319-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3210 NPN silicon high frequency switching transistor
2N3211 NPN silicon high frequency switching transistor
2N320 PNP germanium power transistors
2N3209 PNP SILICON TRANSISTOR
2N322 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N319 thru 2N321 (Germanium) CASE 31(1) (TO-S) . ~ Base connected to case PNP germanium transistors for audio amplifier and low-frequency switching applications. MAXIMUM RATINGS Rating Collector-Bue Voltage Collector-Emitter Voltage Emitter-Due Voltage Collector Current Junction and Storage Temperature Power DlII81patlon at 25°C Ambient Symbol Vcs VCEO VEB Ie T J' Tstg PD Value 25 20 5.0 500 -65 to + 100 225 Unit Vdc Vdc Vdc mAdc °C mW ELECTRICAL CHARACTERISTICS ITA = 250 C unless otherwise noted) Characteristics Symbol Min Max Collector Cutoff Current VCB =-25 Vdc, ~ =0 Emitter Cutoff Current VEB =•15 Vdc, : =0 Collector-Emitter Voltage : = 0.6 mAde, RaE =10 K DC Current Gain : =20 mAdc, VCE =-1 Vdc DC Current Gain : .. 100 mAde, VCE ..