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0 2N321 (SILICON)
NPN silicon high frequency switching transistor is designed for high speed, saturated switching applications for industrial service.
CASE 22
(TO-IS)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Applicable from 0 to 500 mAdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Storage Temperature Range
Symbol
VCEO VCB VEB IC PD
PD
Tstg
Value
15
40 5.0 500 0.36 2.06 1.2 6.9 -65 to+ 200
Unit
Vdc
Vdc Vdc mAdc Watt mW;oC Watts mW;oC °c
FIGURE 1- STORAGE TIME TEST CIRCUIT
r OV-,
-9.0VW
+5.0V
INPUT PULSE Rise Time ~ 1.0 ns 50 n Source Impedance
O.lpl'
0.1 pi 1.0 k
~
OUTPUT TO
SAMPLING OSCILLOSCOPE
Rise Time ~ 1.
2N3210 Datasheet
