2N3289 datasheet by Motorola Semiconductor (now NXP Semiconductors).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N3289 |
|---|---|
| Datasheet | 2N3289 2N3287 Datasheet (PDF) |
| File Size | 150.05 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN silicon annular transistors |
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2N3287 thru 2N3290 (SILICON) CASE 20 (TO·72) NPN silicon annular transistors for high-gain, lownoise amplifier, oscillator, mixer and frequency multiplier applications. 71 mW/oC Power Dissipation at 25° C ambo PD Above 25°C derate 1. POWER GAIN, NOISE FIGURE, & AGC RL =500 ll,6 turns of #16 tinned wire;.
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N3280 | PNP germanium epitaxial mesa transistors |
| 2N3281 | PNP germanium epitaxial mesa transistors |
| 2N3282 | PNP germanium epitaxial mesa transistors |
| 2N3283 | PNP germanium epitaxial mesa transistors |
| 2N3284 | PNP germanium epitaxial mesa transistors |
| 2N3285 | PNP germanium epitaxial mesa transistors |
| 2N3286 | PNP germanium epitaxial mesa transistors |
| 2N3287 | NPN silicon annular transistors |
| 2N3288 | NPN silicon annular transistors |
| 2N320 | PNP germanium power transistors |
