Motorola 2N3289
NPN silicon annular transistors
| Part No. | 2N3289 |
|---|---|
| Datasheet | 2N3289 Download |
| Manufacturer |  Motorola |
| Description | NPN silicon annular transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Symbol VCB VCES VCEO VEB IC 2N3287 2N3288 40 40 20 3.0 50 2N3289 2N3290 30 30 15 3.0 50 Unit Volts Volts Volts Volts rnA Power Dissipation at 25°C Case PD Above 25°C derate 1. 71 mW/oC Power Dissipation at 25° C ambo PD Above 25°C derate 1. 14 mW;oC 300 300 mW 200 200 mW Junction Temperature Storage Temperature Range TJ , T stg +200 +200 °C -65 to +200 -65 to +200 °C 200 MH % TEST CIRCUIT: POWER GAIN, NOISE FIGURE, & AGC RL =500 ll,6 turns of #16 tinned wire; %" 10; Air wound; winding length 3,4"; Vccfeeds tap 4% turns from collector end; output tap 3'12 turns from collector end. T1,3 turns primary and secondary Bifilar wound (close wound) on '14" ceramic form (cambian type) with brass slug. #22 enameled wire. PI,General Radio 874 G6 Pad (6dB) P2,Generai Radio 874 G6 Pad (6dB) 2-469 2N3287 thru 2N3290 (Continued)ELECTRICAL CHARACTERISTICS
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