Download 2N3289 Datasheet PDF
Motorola Semiconductor
2N3289
2N3289 is NPN silicon annular transistors manufactured by Motorola Semiconductor.
- Part of the 2N3287 comparator family.
2N3287 thru 2N3290 (SILICON) CASE 20 (TO- 72) NPN silicon annular transistors for high-gain, lownoise amplifier, oscillator, mixer and frequency multiplier applications. MAXIMUM RATINGS Rating Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Symbol VCB VCES VCEO VEB 2N3287 2N3288 40 40 20 3.0 50 2N3289 2N3290 30 30 15 3.0 50 Unit Volts Volts Volts Volts rn A Power Dissipation at 25°C Case Above 25°C derate 1. 71 m W/o C Power Dissipation at 25° C ambo Above 25°C derate 1. 14 m W;o C 300 m W 200 m W Junction Temperature Storage Temperature Range TJ , T stg +200 +200 °C -65 to +200 -65 to +200 °C 200 MH % TEST CIRCUIT: POWER GAIN, NOISE FIGURE, & AGC RL =500 ll,6 turns of #16 tinned wire; %" 10; Air wound; winding length 3,4"; Vccfeeds tap 4% turns from collector end; output tap 3'12 turns from collector end. T1,3 turns primary and secondary Bifilar wound (close wound) on '14" ceramic form (cambian type) with brass slug. #22 enameled...