2N3375 - NPN silicon RF Power transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3375
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	252.93 KB
Description	NPN silicon RF Power transistors
Datasheet	2N3375 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3300	GENERAL PURPOSE TRANSISTOR
2N3301	GENERAL PURPOSE TRANSISTOR
2N3302	GENERAL PURPOSE TRANSISTOR
2N3303	NPN silicon annular transistor
2N3304	PNP silicon annular transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3375(SILlCON) 2N3553 2N3632 2N 3961 •CASE 79 (10·39) 2N3553 ·'·CASE 24 (10·102) 2N3961 * Collector Connected "·CASE 36 (10·60) to Case .. Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 *•• Stud electrically Isolated from case NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas. MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TC =25·C PD Derate above 25·C Operating and Storage Junction Temperature Range TJ , Tstg 2N3375 2N3553 2N3632 2N3961 .. 40 • .. .. 65 .. .. 4.