| Part number | 2N3375 |
|---|---|
| Datasheet | 2N3375-Motorola.pdf |
| File Size | 252.93 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN silicon RF Power transistors |
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Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 Stud electrically Isolated from case NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas. MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N3375 | RF & MICROWAVE TRANSISTORS | Microsemi Corporation |
 |
2N3375 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
 |
2N3375 | RF & MICROWAVE TRANSISTORS | New Jersey Semi-Conductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N3300 | GENERAL PURPOSE TRANSISTOR |
| 2N3301 | GENERAL PURPOSE TRANSISTOR |
| 2N3302 | GENERAL PURPOSE TRANSISTOR |
| 2N3303 | NPN silicon annular transistor |
| 2N3304 | PNP silicon annular transistor |
| 2N3307 | GENERAL PURPOSE TRANSISTOR |
| 2N3308 | GENERAL PURPOSE TRANSISTOR |
| 2N331 | PNP Transistor |
| 2N3311 | PNP germanium power transistors |
| 2N3312 | PNP germanium power transistors |
