2N3375 - NPN silicon RF Power transistors

Motorola

Datasheet Details

Part number	2N3375
Manufacturer	Motorola
File Size	252.93 KB
Description	NPN silicon RF Power transistors
Datasheet	2N3375 Datasheet
Additional preview pages of the 2N3375 datasheet.

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Full PDF Text Transcription

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2N3375(SILlCON) 2N3553 2N3632 2N 3961 •CASE 79 (10·39) 2N3553 ·'·CASE 24 (10·102) 2N3961 * Collector Connected "·CASE 36 (10·60) to Case .. Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 *•• Stud electrically Isolated from case NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas. MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current IC Total Device Dissipation @ TC =25·C PD Derate above 25·C Operating and Storage Junction Temperature Range TJ , Tstg 2N3375 2N3553 2N3632 2N3961 .. 40 • .. .. 65 .. .. 4.

Published: Nov 6, 2018 |