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2N3444 - GENERAL PURPOSE TRANSISTOR

Download the 2N3444 datasheet PDF. This datasheet also covers the 2N3252 variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3252-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3440 NPN Transistor
2N3445 NPN silicon power transistors
2N3446 NPN silicon power transistors
2N3447 NPN silicon power transistors
2N3448 NPN silicon power transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3252 2N3253 2IM3444 vCEO 30 40 50 v CBO 60 75 80 VEBO 5.0 Pd 1.0 5.71 Unit Vdc Vdc Vdc Watts mW/°C Pd Watts 5.0 mW/°C 28.6 Tj. Tstg - 65 to + 200 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Rftjc R 0JA Max 35 0.175 Unit °C/W °C/mW 2N3252 2N3253 2N3444 GENERAL PURPOSE NPN SILICON JAN, JTX AVAILABLE 2N3253, 2N3444 CASE 79, STYLE 1 TO-39 (TO-205AD) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.