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2N3459 - LOW-FREQUENCY / LOW NOISE JFET

Download the 2N3459 datasheet PDF. This datasheet also covers the 2N3458 variant, as both devices belong to the same low-frequency / low noise jfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3458-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N3459 N-Channel JFET InterFET
2N3459 N-Channel FET Central Semiconductor
2N3459 n-channel JFET Siliconix
2N3458 N-Channel JFET InterFET
2N3458 N-Channel FET Central Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3458 LOW-FREQUENCY / LOW NOISE JFET
2N3425 DUAL AMPLIFIER TRANSISTOR
2N3427 PNP Transistor
2N3428 PNP Transistor
2N3436 LOW-FREQUENCY JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Storage Temperature Range Symbol VDG . v GS lG PD Tstg Value 50 50 10 300 1.7 -65 to +175 Unit Vdc Vdc mA mW mW/°C °C 2N3458 2N3459 2N3460 CASE 22-03, STYLE 4 TO-18 (TO-206AA) JFET LOW-FREQUENCY/ LOW NOISE —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (lG = 1.0 /iA) Gate Reverse Current (VGS = -30 V) Gate Source Cutoff Voltage (V D s = D20, l = 1.0 nA.) ON CHARACTERISTICS 2N3458 2N3459 2N3460 Zero-Gate-Voltage Drain (V D s = 20 Volts) 2N3458 2N3459 2N3460 SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance (Vqs = 20 Volts, f = 1.