2N3460 Datasheet | Motorola Semiconductor

MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Storage Temperature Range Symbol VDG . v GS lG Tstg Value 50 50 10 300 -65 to +175 Unit Vdc Vdc mA mW mW/°C °C 2N3458 2N3459 2N3460 CASE 22-03, STYLE 4 TO-18 (TO-206AA) JFET LOW-FREQUENCY/ LOW NOISE - N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (lG = 1.0 /iA) Gate Reverse Current (VGS = -30 V) Gate Source Cutoff Voltage (V D s = D20, l = 1.0 nA.) ON CHARACTERISTICS...