2N3632 datasheet by Motorola Semiconductor (now NXP Semiconductors).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N3632 |
|---|---|
| Datasheet | 2N3632 2N3375 Datasheet (PDF) |
| File Size | 252.93 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN silicon RF Power transistors |
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Collector electrically connected to case; stud electrically 2N3375 isolated from case 2N3632 Stud electrically Isolated from case NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guaranteed safe operating areas. MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N3632 | RF & MICROWAVE TRANSISTORS | Microsemi Corporation |
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2N3632 | RF & MICROWAVE TRANSISTORS | New Jersey Semi-Conductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N3634 | HIGH VOLTAGE TRANSISTOR |
| 2N3635 | HIGH VOLTAGE TRANSISTOR |
| 2N3636 | HIGH VOLTAGE TRANSISTOR |
| 2N3611 | PNP germanium power transistors |
| 2N3612 | PNP germanium power transistors |
| 2N3613 | PNP germanium power transistors |
| 2N3614 | PNP germanium power transistors |
| 2N3615 | PNP germanium power transistors |
| 2N3616 | PNP germanium power transistors |
| 2N3617 | PNP germanium power transistors |
