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2N3720 - PNP Transistor

Download the 2N3720 datasheet PDF. This datasheet also covers the 2N3719 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3719-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3719 (SILICON) 2N3720 CASE 31 (TO·S) Collector connected to case MAXIMUM RATINGS PNP silicon annular power transistors for highspeed, high-current switching in core, driver and Class C power applications. Rating ColleCtor-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Svmbol VCB VCEO VEB Ie 2N3719 2N372D 40 60 40 60 4.0 4.0 3.0 3.0 10 10 Unit Volts Volts Volts Amp Amp Base Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ T C = 25°C Derate above 25°C Operating JWlCtion and storage Temperature Range IB PD PD TJand Tstg 0.5 0.5 1.0 5.72 6.0 34.3 -65 to +200 Amp Watt mW/oC Watts mwl'>C °c 2N3719 SAFE OPERATING AREAS 2N3720 10 7.0 SOl'S .== 51'S 5.0 ~ 3.