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2N3736 - GENERAL PURPOSE TRANSISTOR

Download the 2N3736 datasheet PDF. This datasheet also covers the 2N3734 variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3734-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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2N3733 RF & MICROWAVE TRANSISTORS New Jersey Semi-Conductor
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2N3734 GENERAL PURPOSE SILICON NPN TRANSISTOR TT
2N3734 NPN SILICON TRANSISTORS Central Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3733 NPN silicon transistor
2N3734 GENERAL PURPOSE TRANSISTOR
2N3738 NPN silicon power transistors
2N3739 NPN silicon power transistors
2N3712 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3734 2N3735 CASE 79, STYLE 1 TO-39 (TO-205AD) 2N3736 2N3737 CASE 26, STYLE 1 TO-46 (TO-206AD) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N3725 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous @ Total Device Dissipation T/ = 25°C Derate above 25°C @ Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3734 2N3735 Symbol 2N3736 2N3737 vCEO VCBO v EBO 30 50 50 75 5.0 'C 1.5 TO-39 TO-46 2N3734 2N3736 2N3735 2N3737 PD 1.0 0.5 5.71 2.86 Pd 4.0 2.0 22.8 11.