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2N3818 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTOR
. designed for applications to 150 MHz.
• High Collector-Emitter Sustaining VoltageVCE(sus) ~ 80 Vdc (Min)
• Power Output Pout ~ 15 Watts at 100 MHz
• Power Gain GPE ~ 7.0 dB (Typ) at 100 MHz with 15 Watts RF Power Output
15 W -100 MHz
RF POWER TRANSISTOR NPN SILICON
MAXIMUM RATINGS INote 11
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current - Continuous Total Device Dissipation@Tc '" 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range Power Input (Nominal) Power Output (Nominal)
Svmbol VCES VCB VEB Ie IB PD
TJ.Tstg
Pin Pout
Value 60 60 4.0 2.0 1.0 25 167
-65 to +175
5.0 20
Unit Vde Vde Vde Ade mAde Watts mW/oC °e
Watts Watts
Note 1.
2N3818 Datasheet
