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2N383 - PNP Transistor

Download the 2N383 datasheet PDF. This datasheet also covers the 2N381 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N381-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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2N3839 NPN SILICON RF TRANSISTORS Central Semiconductor
2N3800DCSM Dual Bipolar PNP Devices Semelab Plc
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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3838 COMPLEMENTARY DUAL AMPLIFIER TRANSISTOR
2N3839 HIGH FREQUENCY TRANSISTOR
2N380 PNP Transistor
2N3800 DUAL PNP SILICON ANNULAR TRANSISTORS
2N3800A DUAL PNP SILICON ANNULAR TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N381 thru 2N383 (GERMANIUM) 2N2171 CASE31m (TO-S) Base connected to case PNP germanium transistors for small-signal audio amplifiers, Class B push-pull output stages and mediumspeed switching circuits. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage (RBE = 10K) Emitter-Base Voltage Collector Current Junction Temperature Collector Dissipation TA = 25°C derate TC = 25°C derate Symbol VCB VCER VEB IC TJ PD Value 50 25 20 400 -65 to +100 225 3.0 500 6.7 Unit Volts Volts Volts mA °c mW mW;oC mW mW;oC ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted) Characteristics Symbol Min Typical Max Unit Collector-Base Cutoff Current (VCB = -25 Vdc) Emitter-Base cutoff Current (YEB = -20 Vdc) Collector-Emitter Voltage (IC = 500 I.I.