Datasheet Summary
2N3924 (SILICON) thru
2N3927
NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz.
CASE 24 2N3925
(TO- 102)
Collector electrically connected to case; stud electrically isolated from case
CASE 36 2N3926 2N3927
(TO- 60)
Stud and case electrically connected to emitter
CASE 79 2N3924
(TQ.39)
Collector connected to case
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol 2N3924 2N392S 2N3926 2N3927 Unit
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
IC fr.5
Power DisSipation @' TC = 25° C
Derate above 25° C
Operating...
