2N3924 - NPN silicon annular RF power transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3924
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	344.79 KB
Description	NPN silicon annular RF power transistors
Datasheet	2N3924 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N3925	NPN silicon annular RF power transistors
2N3926	NPN silicon annular RF power transistors
2N3927	NPN silicon annular RF power transistors
2N3902	HIGH VOLTAGE NPN SILICON TRANSISTORS
2N3903	NPN Transistor

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2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. CASE 24 2N3925 (TO· 102) Collector electrically connected to case; stud electrically isolated from case CASE 36 2N3926 2N3927 (TO·60) Stud and case electrically connected to emitter CASE 79 2N3924 (TQ.39) Collector connected to case MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol 2N3924 2N392S 2N3926 2N3927 Unit Collector-Emitter Voltage VCEO 18 Collector-Base Voltage VCB 36 Emitter-Base Voltage VEB 4.0 Collector Current IC fr.5 Power DisSipation @' TC = 25° C PD 7.0 Derate above 25° C 40 Operating and Storage Junction TJ , Tstg Temperature Range 18 18 36 36 4.0 4.0 1.0 1.5 10 11.6 57.1 66.