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2N3927 - NPN silicon annular RF power transistors

Download the 2N3927 datasheet PDF. This datasheet also covers the 2N3924 variant, as both devices belong to the same npn silicon annular rf power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3924-Motorola.pdf) that lists specifications for multiple related part numbers.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3924 (SILICON) thru 2N3927 NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. CASE 24 2N3925 (TO· 102) Collector electrically connected to case; stud electrically isolated from case CASE 36 2N3926 2N3927 (TO·60) Stud and case electrically connected to emitter CASE 79 2N3924 (TQ.39) Collector connected to case MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol 2N3924 2N392S 2N3926 2N3927 Unit Collector-Emitter Voltage VCEO 18 Collector-Base Voltage VCB 36 Emitter-Base Voltage VEB 4.0 Collector Current IC fr.5 Power DisSipation @' TC = 25° C PD 7.0 Derate above 25° C 40 Operating and Storage Junction TJ , Tstg Temperature Range 18 18 36 36 4.0 4.0 1.0 1.5 10 11.6 57.1 66.