2N3950 - NPN silicon RF power transistor

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N3950
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	272.03 KB
Description	NPN silicon RF power transistor
Datasheet	2N3950 Datasheet

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2N3959	HIGH FREQUENCY TRANSISTOR
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2N3950 (SILICON) NPN silicon RF power transistor designed for high-power RF amplifier applications in military and industrial equipment. CASE 36 (10·60) EmiHer common to stud end eese MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage VCEO Ves Emitter-Base Voltage VES Collector-Current - Continuous IC Total Device Dissipation @ TA .. 25·C PD Derate above 25·C Total Device Dissipation @ TC =25·C PD Derate above 25·C Operating and storage Junction Temperature Range TJ • Tstg Value 35 65 4.0 3.3 2.8 16 70 0.4 -65 to +200 Unit Vdc Vdc Vdc Amp Watts mWrC! Watts WrC ·C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal ReSistance, Junction to Case Symbol Max 'JA 62.