Download 2N3966 Datasheet PDF
Motorola Semiconductor
2N3966
CASE 20-03, STYLE 1 TO-72 (TO-206AF) JFET HIGH-FREQUENCY AMPLIFIER - N-CHANNEL DEPLETION MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation Ta = 25°C Derate above 25°C (Free Air) Lead Temperature (1/16" from Case for 10 Seconds) Storage Temperature Range Symbol v Ds Vdg vgs "G Tstg Value 30 30 30 10 300 -55 to 200 Unit Vdc Vdc Vdc ju A m W m W/°C °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage G(l = 1.0 m A, v ds = 0) Gate Reverse Current (v G s = 20 v, v DS = o) Drain Cutoff Current (v D s = 10 v, Vqs = ~ 70 v < ta = 150°C) Gate Source Cutoff Voltage do = 10 n A, vds = i° v > ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (v D s = 20 v, v G s = o) Drain-Source "ON" Voltage (ID = 1.0 m A, Vqs =...