| Part number | 2N4012 |
|---|---|
| Datasheet | 2N4012-Motorola.pdf |
| File Size | 97.13 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | NPN silicon annular transistor |
|
|
12 2N40 (SILICON) ~E3~ (TO·60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications. MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (VEB(off) = 1. f,.~ 334 MHz +28 V r- - - - - - -17JZZ2'~:zzzzzzzz~ItiZZ02.Z2zpmfzzz:ZZZZZZZZzmzzzz:~ 2.7!l O.s..IOpF 1000 pf RFC I ~ 0.22 /LH RFC, ~ 0.33 OHMS,.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N4015 | DUAL AMPLIFIER TRANSISTOR |
| 2N4016 | DUAL AMPLIFIER TRANSISTOR |
| 2N4026 | GENERAL PURPOSE TRANSISTOR |
| 2N4027 | GENERAL PURPOSE TRANSISTOR |
| 2N4028 | GENERAL PURPOSE TRANSISTOR |
| 2N4029 | GENERAL PURPOSE TRANSISTOR |
| 2N4030 | GENERAL PURPOSE TRANSISTOR |
| 2N4031 | GENERAL PURPOSE TRANSISTOR |
| 2N4032 | GENERAL PURPOSE TRANSISTOR |
| 2N4033 | GENERAL PURPOSE TRANSISTOR |
