2N4012 Description
12 2N40 (SILICON) ~E3~ (TO·60) stud isolated from case NPN silicon annular transistor, designed for frequency multiplication applications. MAXI MUM RATI NGS (TA = 25°C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (VEB(off) = 1. f,.~ 334 MHz +28 V r- - - - - - -17JZZ2'~:zzzzzzzz~ItiZZ02.Z2zpmfzzz:ZZZZZZZZzmzzzz:~ 2.7!l O.s..IOpF 1000 pf RFC I ~ 0.22 /LH RFC, ~ 0.33 OHMS,.