Motorola 2N4012
NPN silicon annular transistor
| Part No. | 2N4012 |
|---|---|
| Datasheet | 2N4012 Download |
| Manufacturer |  Motorola |
| Description | NPN silicon annular transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(TC; 25°C unless otherwise noted) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I) (Ic = 0 to 200 mAdc, IB = 0) BVCEO 40 - - Collector-Emitter Breakdown Voltage /11 (IC = 0 to 200 mAdc, VEB(Off) = I. 5 Vdc) BVCEV 65 - - Collector-Base Breaxdown Voltage (IC = O. I mAdc, IE = 0) BVCBO 65 - - Emitter-Base Breakdown Voltage (IE = O. I mAdc, IC = 0) BVEBO 4- - Collector Cutoff Current (VCE = 30 Vdc, IB = 0) ON CHARACTERISTICS DC Current-Gain = (Ic 1.0 Adc, VCE; 5.0 Vdc) = = (IC 125 mAdc, VCE 5.0 Vdc) = Collector-Emitter Saturation Voltage (IC 500 mAdc, IB = 100 mAdc) ICEO - - O. I hFEI hFE2 4.0 10 -- 40 - VCE(sat) - - 1.0 DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 125 mAdc, VCE = 28 Vdc, 1= 100 MHz) Collector-Base Cutoff Frequency t (VCE = 28 Vdc, IC = 0) Output Capacitance eVCB = 30 Vdc, IE = 0) Base-Spreading Resistance (IC = 250 mAdc, VCE = 28 Vdc, I = 400 MHz) IT - 350 - Ic - 25 - Cob - - 10 rbb...