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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
Order this document by 2N4125/D
2N4125 2N4126
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating
Symbol 2N4125 2N4126 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
30 25 30 25
4.0 200 625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watts 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.
2N4126 Datasheet
