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2N4167 - THYRISTORS

Download the 2N4167 datasheet PDF. This datasheet also covers the 2N4151 variant, as both devices belong to the same thyristors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4151-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4151 (SILICON) thru 2N4198 THYRISTORS · .. multi·purpose PNPN silicon controlled rectifiers suited for indus· trial, consumer, and mulitary applications. Offered in a choice of space·saving, economical packages for mounting versatility. • Uniform Low·Level Noise·lmmune Gate Triggering IGT ~ 10 mA (Typ) @ TC ~ 250 C • Low Forward "On" Voltage I"f ~ 1.0 V (Typ) @ 5.0 Amp @ 250 C • High Surge·Current Capability ITSM ~ 100 Amp Peak • Fatigue·Free Solder Construction • Shorted Emitter Construction MAXIMUM RATINGS (Apply over operating temperature range and for all case types unless otherwise noted) Rating Symbol Value Unit *Peak Reverse Blocking Voltage (1) 2N4151, 59, 67,75,83,91 2N4152, 60, 68. 76, 84, 92 VRRM Volts 25 50 2N4153, 61. 69, 77,85,93 100 2N4154. 62, 70, 78. 86.
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