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2N4232 - Medium-power NPN silicon transistors

Download the 2N4232 datasheet PDF. This datasheet also covers the 2N4231 variant, as both devices belong to the same medium-power npn silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4231-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4231 thru 2N4.233 (SILICON) Medium-power NPN silicon transistors designed for driver circuits, switching, and amplifier applications. CASE 80 (TO-66) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous. Base Current Total Device Dissipation TC = 25° C Derate above 25° C Symbol VCEO VCB VEB IC' IB PD 2N4231 2N4232 2N4233 Unit 40 60 80 Vdc 50 70 90 Vdc 5.0 Vdc 3.0 Adc 5.0 1.0 Adc 35 Watts 0.2 W/·C Operating & Storage Junction Temperature Range TJ , Tstg -55 to +200 ·C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case * The 3.0 Amp maximum Ie valUe is based upon JEDEC current ~~.:rin requirements. The 5.