The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N4264 2N4265
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO vCBO v EBO
"C
PD
Pd
TJ. Tstg
2N4264 2N4265 15 12 30
6.0 200 625 5.0
1.5 12
-55 to +150
Unit
Vdc Vdc Vdc
mAdc
mW
mW/°C
Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol R &JC R &JA
Max
83.3 200
Unit °C/W °c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
2N4265 Datasheet
