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2N4407 - GENERAL PURPOSE TRANSISTORS

Download the 2N4407 datasheet PDF. This datasheet also covers the 2N4406 variant, as both devices belong to the same general purpose transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4406-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4406 2N4407 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTORS PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —"Collector Current Continuous* @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T st g Symbol Rojc R«JA Value 80 80 5.0 2.0 1.25 7.15 8.75 50 -65 to +200 Max 20 140 Unit Vdc Vdc Vdc Amps Watts mW/°C Watts mW/°C °C Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.