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2N4410 - AMPLIFIER TRANSISTOR

Download the 2N4410 datasheet PDF. This datasheet also covers the 2N4409 variant, as both devices belong to the same amplifier transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4409-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 80 120 5.0 250 625 5.0 Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction to Ambient RqJA 200 Thermal Resistance, Junction to Case RqJC 83.