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2N4898 thru 2N4900 (SILICON)
~~ CASE 80
CdP
(TO·66)
Medium-power PNP silicon transistors designed for driver circuits, switching, and amplifier applications. Complement to NPN 2N4910 thru 2N4912.
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current - Continuous *
Base Current Total Device Dissipation T C 25°C
Derate above 25° C Operating & Storage Junction
Temperature Range
Symbol 2N4898 2N4899 2N4900
VCEO
40
60
80
VCB VEB
IC*
IB
. 40 60 5.0 -1.0
.- 4 . 0 1.0
PD
25
0.143
r-- T J , T stg
65 to +200
80
,
•
·
• •
Unit
Vdc Vdc Vdc Adc
Adc Watts W/oC °c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case 8JC
7.0
Unit
°C/W
• The 1.