This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N4941 |
|---|---|
| Datasheet | 2N4941 2N4937 Datasheet (PDF) |
| File Size | 52.33 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | DUAL AMPLIFIER TRANSISTOR |
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2.0 2.9 3.4 mW/°C pd TJ< Tstg 1.2 6.85 2.0 11.42 -65 to +200 Watts mW/°C °C (TA = 25°C unless otherwise noted) . OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 10 A»Adc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 10 ^Adc, lc = 0) Collector Cutoff Current (VcB = 40Vdc, El = 0) Emitter Cutoff.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| 2N4940 | DUAL AMPLIFIER TRANSISTOR |
| 2N4900 | Medium-power PNP silicon transistors |
| 2N4901 | PNP power transistors |
| 2N4902 | PNP power transistors |
| 2N4903 | PNP power transistors |
| 2N4904 | PNP power transistors |
| 2N4905 | PNP power transistors |
| 2N4906 | PNP power transistors |
| 2N4910 | Medium-power NPN silicon transistors |
| 2N4911 | Medium-power NPN silicon transistors |
