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2N4958 - HIGH FREQUENCY TRANSISTOR

Download the 2N4958 datasheet PDF. This datasheet also covers the 2N4957 variant, as both devices belong to the same high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N4957-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N4957 2N4958 2N4959 2N5829 2N4957 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO vCBO v EBO ic PD TJ' Tstg Value 30 30 3.0 30 200 1.14 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted] Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.