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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5630/D
High-Voltage Ċ High Power Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc — 2N5630, 2N6030
VCEO(sus) = 140 Vdc — 2N5631, 2N6031
• High DC Current Gain — @ IC = 8.0 Adc
hFE = 20 (Min) — 2N5630, 2N6030 hFE = 15 (Min) — 2N5631, 2N6031
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Low Collector–Emitter Saturation Voltage — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.