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2N5630 - Power Transistor

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc — 2N5630, 2N6030 VCEO(sus) = 140 Vdc — 2N5631, 2N6031 • High DC Current Gain — @ IC = 8.0 Adc hFE = 20 (Min) — 2N5630, 2N6030 hFE = 15 (Min) — 2N5631, 2N6031 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Low Collector–Emitter Saturation Voltage — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.