2N5771 Datasheet PDF

MAXIMUM RATINGS

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Tota^ Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Lead Temperature Symbol vCEO vCBO VEBO 'C PD Pd TJ- Tstg Value 15 15 4.5 50 0.625 1.0 -55 to +150 Unit Vdc Vdc Vdc mA Watts mW/°C Watt mW/°C °C TL 260 °c 2N5771 CASE 29-02, STYLE 1 TO-92 (TO-226AA) SWITCHING TRANSISTOR PNP SILICON

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dc = 3.0 mA)(1) Collector-Emitter Breakdown Voltage dc = 100 /xA) Collector-Base Breakdown Voltage dc = 100 vA) Emitter-Base Breakdown Voltage 0e = 100 /uA) Collector Cutoff Current (Vqb = 8.0 Vdc) Collector Cutoff Current (Vce = 8.0 Vdc) (Vce = 8.0 Vdc, TA = 125°C) Emitter Cutoff Current (Vbe = 4.5 Vdc) ON CHARACTERISTICS DC Curren