The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N5943
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C Total Device Dissipation (w Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol v CEO v CBO v EBO
"C
PD
Pd
TJ' Tstg
Value 30 40 3.5 400
1.0 5.7 3.5 0.02
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watt mW/°C Watts mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Irj = 5.