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2N6031 - Power Transistor

Download the 2N6031 datasheet PDF. This datasheet also covers the 2N6030 variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6030-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc — 2N5630, 2N6030 VCEO(sus) = 140 Vdc — 2N5631, 2N6031 • High DC Current Gain — @ IC = 8.0 Adc hFE = 20 (Min) — 2N5630, 2N6030 hFE = 15 (Min) — 2N5631, 2N6031 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Low Collector–Emitter Saturation Voltage — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.