2N6255 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N6255
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	73.00 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	2N6255 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N6251	High Voltage NPN Silicon Power Transistors
2N6256	UHF AMPLIFIER TRANSISTOR
2N6237	SIlicon Controlled Rectifiers
2N6238	SIlicon Controlled Rectifiers
2N6239	SIlicon Controlled Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6255 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Jq = 25°C Derate above 25°C Storage Temperature Symbol vCEO v CBO v EBO ic PD Tstg Value 18 36 4.0 1.0 5.0 28.5 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Typ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (IE = 1.