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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6338/D
High-Power NPN Silicon Transistors
. . . designed for use in industrial–military power amplifier and switching circuit
applications.
• High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 • High DC Current Gain —
hFE = 30 – 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc • Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
• Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ts = 1.0 µs (Max) tf = 0.
2N6338 Datasheet
