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2N6388 - NPN SILICON POWER TRANSISTORS

Download the 2N6388 datasheet PDF. This datasheet also covers the 2N6387 variant, as both devices belong to the same npn silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6387_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics
2N6388 Plastic Medium-Power Silicon Transistors ON Semiconductor
2N6388 Silicon NPN Transistor NTE
2N6388 Silicon NPN Power Transistors SavantIC
2N6388 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS CDIL

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N6387 NPN SILICON POWER TRANSISTORS
2N6304 HIGH FREQUENCY TRANSISTOR
2N6305 HIGH FREQUENCY TRANSISTOR
2N6338 NPN Transistor
2N6339 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6387/D Plastic Medium-Power Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage – @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — 2N6387 VCEO(sus) = 80 Vdc (Min) — 2N6388 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 5.