2N6603 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | 2N6603 |
|---|---|
| Datasheet | 2N6603-Motorola.pdf |
| File Size | 109.06 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | HIGH FREQUENCY TRANSISTOR |
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Characteristic Symbol Typ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, lc = 0) Collector Cutoff Current (Vcb = 15 Vdc, Ie = 0) v (BR)CEO v (BR)CBO v (BR)EBO ! CBO 15 25 3.0 - Vdc Vdc Vdc 50 nAdc ON CHARACTERISTICS DC Current Gain dC = 15 mAdc, Vce = 10 Vdc) hFE 30 200 SMALL SIGNAL...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
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|---|---|
| 2N6604 | HIGH FREQUENCY TRANSISTOR |
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| 2N6030 | Power Transistor |
| 2N6031 | Power Transistor |
| 2N6040 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6042 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6043 | COMPLEMENTARY SILICON POWER TRANSISTORS |
