2N6603 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N6603
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	109.06 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	2N6603 Datasheet

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Full PDF Text Transcription (Reference)

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2N6603 JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS (Ta = 25°C Free Air Temperature) Rating Symbol Value Collector-Emitter Voltage vCEO 15 Collector-Base Voltage VCBO 25 Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 125°C Derate above 125°C VEBO 'c PD 3.0 30 400 5.33 Storage Temperature Tstg - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic Symbol Typ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 0.