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2N702 (SILICON) 2N703
CASE 22
(TO·18)
NPN silicon annular transistors designed for lowlevel, high-speed switching applications.
MAXIMUM RATINGS (T." 25'C unless otherwise noted)
Rating
Collector·Emitter Voltage
Collector·aase Voltage
Emitter·aase Voltage
Collector Current
Total Device Dissipation @TA = 25' C Derate above 25' C
Total Device Dissipation @TC = 25' C Derate above 25' C
Operating and Storage Junction Tem~_erature Range
Symbol Value Unit
VCEO
25
Vdc
Vca
25
Vdc
YEa
5.0
Vdc
IC
50
mAdc
PD PD Tstg
300
roW
2.0
mW/'C
600
mW
4.0
mW/'C
.65 to ...175 'c
ELECTRICAL CHARACTERISTICS (T." 25'C unless otherwise noted)
Characteristic
Symbol Min
OFF CHARACTERISTICS
Collector-Emitter areakdown Voltage
(IC =2.0 mAde, la =0)
Collector-a1/-..
2N702 Datasheet
